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 2SD1898
Epitaxial Planar NPN Transistors
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature
* Single pulse Pw = 20ms
Symbol
Limits 100 80 5 1 2 0.5 150, -55 to +150
Unit
VCBO VCEO VEBO IC I CP PC Tj , Tstg
Vdc Vdc Vdc A(DC) A (Pulse)* W
C
C ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) Parameter Symbol Collector-Base Breakdown Voltage(Ic=50uA, I E =0) Collector-Emitter Breakdown Voltage(Ic=1mA,I B=0 ) Emitter-Base Breakdown Voltage(I E =50uA, I C =0) Collector Cutoff Current(VCB=80V, I E =0) Emitter Cutoff Current(VEB=4V, IC =0) BV CBO BV CEO BVEBO ICBO IEBO
Min
Typ -
Max -
Unit
100 80 5
-
V V V uA uA
1 1
WEITRON
http://www.weitron.com.tw
2SD1898
C ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) (Countinued) Min Typ Max Unit Parameter Symbol
DC Current Gain (VCE=3V, Ic=500mA) Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) Transition Frequency (VCE=10V, Ic=50mA, f=100MHz) Output Capacitance (VCB=10V, I E =0A, f=1MHz) h FE V CE(sat) fT Cob 82
-
390 0.4
-
-
V MHz pF
100 20
CLASSIFICATION OF hFE
Marking Rank Range P 82-180 DF Q 120-270 R 180-390
ELECTRICAL CHARACTERISTIC CURVES
1000
T a=25C
C OLLE C TOR C UR R E NT : IC (mA)
C OLLE C T OR C UR R E NT : IC (A)
T a=25C V C E =5V
1.0 0.8 0.6 0.4
6mA 5mA 4mA 3mA 2mA
100
10
1
1mA 0.2 0 IB=0mA 10
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 B AS E T O E MIT T E R V O LT AG E : V B E (V )
0
2
4
68
C OLLE C T OR T O E MIT T E R V OLT AG E : V C E (V )
FIG.1 Grounded Emitter Propagation Characteristics
FIG.2 Grounded Emitter Output Characteristics
WEITRON
http://www.weitron.com.tw
2SD1898
C OLLE C TOR S ATUR ATION VOLTAG E : VCE(sat) (V)
T a=25C
T a=25C
DC C UR R E NT G AIN : hFE
2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 10 100 1000 IC /IB=20/1 10/1
1000 V C E =3V 1V 100
0
0
10
100
1000
C O L L E C T O R C UR R E NT : IC (mA)
C O LLE C T O R C UR R E NT : IC (mA)
FIG.3 DC Current Gain vs. Collector Current
T a=25C V C E =5V
FIG.4 Collector-Emitter Ssaturation Voltage vs. Collector Current
1000
T R ANS IT ION F R E QUE NC Y : fT (MHz)
500 200 100 50 20 10 5 2 1 2 5 10 20
COLLE CTOR OUTPUT CAPACITANCE : Cob (pF) E MITTE R INPUT CAPACITANCE : Cib (pF)
T a=25C f=1MHz IE =0A Ic=0A
100
10
50 100 200
500 1000
1 0.1 0.2
0.5
1
2
5
10
20
50 100
E MIT T E R C UR R E NT : -IE (mA)
C O LLE C T O R T O B AS E V O LT AG E : V C B (V ) E MIT T E R T O B AS E V O LT AG E : V E B (V )
FIG.5 Gain Bandwidth Product vs. Emitter Current
10 5
FIG.6 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage T a=25C
S ingle non-repetitive puls e
C OLLE C TOR C UR R E NT : IC (A)
2 1 500m 200m 100m 50m 20m 10m 5m
Ic Max (P uls e)
DC
0 =1 Pw
S m
P 0 =1 w
2
S 0m
2m 1m 0.1 0.2 0.5 1
5 10 20
50 100 200 500 1000
C O L L E C T O R T O E MIT T E R V O L T AG E : V C E (V )
FIG.7 Safe Operating Area
WEITRON
http://www.weitron.com.tw
2SD1898
SOT-89 Outline Dimensions
unit:mm
SOT-89
E G A
J
C
H
K L
B
D
Dim A B C D E G H J K L
Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900
WEITRON
http://www.weitron.com.tw


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